2SB1007

更新时间： 2024-11-10 06:25:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	81K
描述
isc Silicon PNP Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1007 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB1007

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -80V(Min)

·Good Linearity of h_FE

·Complement to Type 2SD1378

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

-80

-5

Collector Current-Continuous

-0.7

Collector Power Dissipation

@ T_C=25℃

P_C

Collector Power Dissipation

@ T_a=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与2SB1007相关器件

型号	品牌	获取价格	描述	数据表
2SB1007/P	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PQ	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/Q	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/QR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/R	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007P	ISC	获取价格	暂无描述
2SB1007Q	ISC	获取价格	Transistor