2SB1007

更新时间： 2024-09-18 06:25:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	81K
描述
isc Silicon PNP Power Transistor

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中文翻译

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2SB1007 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB1007

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -80V(Min)

·Good Linearity of h_FE

·Complement to Type 2SD1378

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

-80

-5

Collector Current-Continuous

-0.7

Collector Power Dissipation

@ T_C=25℃

P_C

Collector Power Dissipation

@ T_a=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SB1007相关器件

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2SB1007/P	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PQ	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/Q	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/QR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/R	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007P	ISC	获取价格	暂无描述
2SB1007Q	ISC	获取价格	Transistor