Datasheet > 2SA2169-E

2SA2169-E

更新时间： 2024-02-15 01:37:08

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	426K
描述
Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

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技术参数
数据手册

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2SA2169-E 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.5
Base Number Matches：	1

2SA2169-E 数据手册

2SA2169 / 2SC6017

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Base Current

(--)2

0.95

Collector Dissipation

Tc=25 C

Junction Temperature

Storage Temperature

Tstg

150

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

=(--)40V, I =0A

Unit

min

max

(--)10

Collector Cutoff Current

Emitter Cutoff Current

CBO

EBO

=(--)4V, I =0A

(--)10

DC Current Gain

=(--)2V, I =(--)1A

200

(560)700

Gain-Bandwidth Product

Output Capacitance

=(--)5V, I =(--)1A

(130)200

(90)60

MHz

Cob

=(--)10V, f=1MHz

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-On Time

(sat)

=(--)5A, I =(--)250mA

(--290)180 (--580)360

=(--)5A, I =(--)250mA

(--)0.93

(--)1.4

=(--)100 A, I =0A

(--50)100

(--)50

(BR)CBO

(BR)CEO

(BR)EBO

=(--)1mA, R =

∞

I =(--)100 A, I =0A

(--)6

(70)40

(650)1000

(60)80

Storage Time

See speciﬁed Test Circuit.

stg

Fall Time

Switching Time Test Circuit

PW=20μs

D.C.≤1%

OUTPUT

INPUT

50Ω

100μF

= --5V

470μF

I =20I = --20I =3A

B1 B2

For PNP, the polarity is reversed.

=20V

Ordering Information

Device

Package

Shipping

memo

2SA2169-E

500pcs./bag

700pcs./reel

2SC6017-E

Pb Free

2SA2169-TL-E

2SC6017-TL-E

TP-FA

No.8275-2/10

123 4 5 6 7...10

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