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2SA2154MFV PDF预览

2SA2154MFV

更新时间: 2024-11-14 12:50:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体运算放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 264K
描述
General-Purpose Amplifier Applications

2SA2154MFV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.39
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SA2154MFV 数据手册

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2SA2154MFV  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA2154MFV  
General-Purpose Amplifier Applications  
Unit: mm  
1.2 ± 0.05  
High voltage and high current  
: VCEO = 50 V, IC = 150 mA (max)  
Excellent h linearity  
0.80 ± 0.05  
FE  
1
: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.)  
FE  
C
FE  
C
High h  
FE  
h
FE  
= 120~400  
:
Complementary to 2SC6026MFV  
Lead (Pb) - free  
3
2
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
1.BASE  
2.EMITTER  
3.COLLECTOR  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VESM  
5  
V
I
150  
30  
mA  
mA  
mW  
°C  
°C  
C
JEDEC  
JEITA  
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150*  
150  
C
TOSHIBA  
2-1L1A  
T
j
T
stg  
55~150  
Weight: 0.0015 g (typ.)  
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)  
Mount Pad Dimensions (Reference)  
0.5  
0.45  
1.15  
0.4  
0.45  
0.4  
0.4  
Unit: mm  
1
2005-07-14  

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