Datasheet > 2SA1791GR

2SA1791GR

更新时间： 2024-11-03 08:51:11

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	196K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

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2SA1791GR 数据手册

Transistors

2SA1791

Silicon PNP epitaxial planar type

For low-frequency amplification

Complementary to 2SC4656

Unit: mm

+0.1

0.2

0.15

–0.05

■ Features

• High forward current transfer ratio f_T

• Small collector output capacitance C_ob

• SS-Mini type package allowing downsizing of the equipment and

automatic insertion through the tape packing

(0.5) (0.5)

1.0 0.1

1.6 0.1

5˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

−50

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

1: Base

2: Emitter

3: Collector

−50

−5

EIAJ: SC-75

SSMini3-G1 Package

−50

°C

Collector power dissipation

Junction temperature

P_C

125

Marking Symbol: AL

T_j

125

Storage temperature

T_stg

−55 to +125

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−50

−5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Transition frequency

I_C= −10 µA, I_E= 0

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −10 V, I_E= 0

V_CE= −10 V, I_B= 0

V_CE= −10 V, I_C= −2 mA

− 0.1

−100

µA



I_CEO

h_FE

200

500

V_CE(sat)I_C= −10 mA, I_B= −1 mA

− 0.1 − 0.3

250

f_T

V_CB= −10 V, I_E= 2 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

1.5

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

200 to 400

250 to 500

Publication date: March 2003

SJC00032BED

12 3

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