Transistors
2SA1791
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC4656
Unit: mm
+0.1
+0.1
0.2
0.15
–0.05
–0.05
3
■ Features
• High forward current transfer ratio fT
• Small collector output capacitance Cob
• SS-Mini type package allowing downsizing of the equipment and
automatic insertion through the tape packing
1
2
(0.5) (0.5)
1.0 0.1
1.6 0.1
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
1: Base
2: Emitter
3: Collector
−50
V
−5
V
EIAJ: SC-75
SSMini3-G1 Package
−50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
PC
125
Marking Symbol: AL
Tj
125
Storage temperature
Tstg
−55 to +125
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−50
−50
−5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
−100
µA
µA
ICEO
hFE
200
500
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.1 − 0.3
250
V
fT
VCB = −10 V, IE = 2 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
1.5
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
hFE
200 to 400
250 to 500
Publication date: March 2003
SJC00032BED
1