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2SA1796 PDF预览

2SA1796

更新时间: 2024-11-01 22:52:39
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体开关晶体管
页数 文件大小 规格书
9页 408K
描述
Switching Power Transistor(-7A PNP)

2SA1796 数据手册

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SHINDENGEN  
Switching Power Transistor  
LSV Series  
OUTLINE DIMENSIONS  
Case : E-pack  
2SA1796  
Unit : mm  
(TE7T4)  
-7A PNP  
RATINGS  
Absolute Maximum Ratings  
Item  
Symbol  
Conditions  
Ratings  
Unit  
Storage Temperature  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
IC  
-55~150  
150  
V
V
V
Junction Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current DC  
-60  
-40  
-7  
-7  
A
Collector Current Peak  
Base Current DC  
ICP  
IB  
-14  
-1.5  
A
A
Base Current Peak  
IBP  
PT  
-2  
A
Total Transistor Dissipation  
Tc = 25  
10  
W
Electrical Characteristics (Tc=25)  
Item  
Symbol  
Conditions  
IC = -0.1A  
Ratings  
Min -40  
Max -0.1  
Max -0.1  
Max -0.1  
Min 70  
Unit  
V
Collector to Emitter Sustaining Voltage  
Collector Cutoff Current  
VCEO(sus)  
ICBO  
At rated Voltage  
mA  
ICEO  
Emitter Cutoff Current  
DC Current Gain  
IEBO  
At rated Voltage  
VCE = -2V, IC = -3.5A  
IC = -3.5A  
mA  
hFE  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Thermal Resistance  
VCE(sat)  
VBE(sat)  
θjc  
Max -0.3  
Max -1.2  
Max 12.5 /W  
TYP 50  
Max 0.3  
V
V
IB = -0.2A  
Junction to case  
VCE = -10V, IC = -0.7A  
Transition Frequency  
fT  
ton  
MHz  
Turn on Time  
IC = -3.5A  
Storage Time  
Fall Time  
ts  
tf  
IB1 = -0.35A, IB2 = -0.35A  
RL = 8Ω, VBB2 = -4V  
Max 1.5  
μs  
Max 0.5  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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