Datasheet > 2SA1797

2SA1797

更新时间： 2024-11-02 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SA1797 数据手册

SMD Type

Transistors

Power Transistor

2SA1797

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Features

Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.

Excellent DC current gain characteristics.

+0.1

0.48

-0.1

+0.1

0.53

-0.1

+0.1

0.44

-0.1

Complements the 2SA1797 and 2SC4672.

1. Base

+0.1

3.00

-0.1

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter Voltage

Symbol

V^CEO

V^CBO

V^EBO

I^C

Rating

Unit

-50

Collector-base Voltage

Emitter-base Voltage

Collector current

-50

-6

-3

Collector power dissipation

Jumction temperature

Storage temperature

P^C

0.5

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

BV^CEOIC = -1mA

Testconditons

Min

-50

-6

Typ

Max

Unit

Collector-emitter breakdown voltage

Collector-base breakdown voltae

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BV^EBO

I^CBO

IC = -50

IE = -50

VCB = -50V

VEB = -5V

-0.1

ìA

Emitter cutoff current

I^EBO

Collector-Emitter Saturation Voltage

DC current transfer ratio

V^CE(sat)IC = -1A , IB = -50mA

h^FEVCE = -2V , IC = -0.5A

f^T

-0.15 -0.35

270

Transition frequency

VCE = -2V , IE = 0.5A , f = 100MHz

VCB = -10V , IE = 0A , f = 1MHz

200

MHz

Output Capacitance

C^ob

hFE Classification

Marking

Rank

hFE

82 180

120 270

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