SMD Type
Transistors
PNP Transistors
2SA1797
■ Features
1.70 0.1
● Low saturation voltage
● Excellent DC current gain characteristics
● Complements to 2SC4672
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-50
-50
V
-6
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
-2
A
mW
℃
I
CM
-3
P
C
500
150
-55 to 150
T
J
Storage Temperature range
T
stg
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -50 μA, I =0
Ic= -1 mA, I =0
= -50μA, I =0
CB= -50 V , I =0
EB= -5V , I =0
Min
-50
-50
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
-100
-100
-0.35
-1.2
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-1A, I
B
=-50mA
=-50mA
V
C=-1A, I
B
hFE
V
V
V
CE= -2V, I
CB= -10V, I
CE= -2V, I = -500mA,f=100MHz
C
= -500mA
82
270
Collector output capacitance
Transition frequency
C
ob
T
E= 0,f=1MHz
36
pF
f
C
200
MHz
■ Classification of hfe
Type
Range
Marking
2SA1797-P
82-180
2SA1797-Q
120-270
AGQ
AGP
1
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