2SA1797
PNP
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
4
ꢀ High transition frequency
ꢀ High power dissipation
1
2
3
A
E
PACKAGE DIMENSIONS
C
B
D
1
F
G
H
2
K
3
J
L
1. Base
2. Collector
3. Emitter
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
4.40
3.94
1.40
2.30
4.60
4.25
1.60
2.60
G
H
J
0.40
1.50 TYP
3.00 TYP
0.32
0.58
K
0.52
0.44
E
F
1.50
0.89
1.70
1.20
L
0.35
MARKING : AGX
X = hFE Rank Code
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Unit
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
-50
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-50
-6
V
Collector Current -Continuous
Collector Dissipation
-2
0.5
A
PC
W
°C
Junction & Storage temperature
TJ, TSTG
150, -55~150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Symbol Min.
Typ. Max.
Unit
Test Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-50
-50
-6
-
-
-
V
V
IC=-50µA, IE=0
IC= -1mA, IB=0
-
V
IE=-50µA, IC=0
VCB=-50V, IE=0
VEB=-5 V, IC=0
-0.1
-0.1
270
-0.35
µA
µA
Emitter cut-off current
IEBO
-
DC current gain
hFE
82
-
VCE=-2V, IC= -500mA
IC=-1A, IB= -50mA
Collector-emitter saturation voltage
Typical Transition frequency
Output Capacitance
VCE(sat)
f T
V
-
200
36
-
MHz VCE=-2V, IC=-500mA, f = 100MHz
pF VCB=-10V, IE=0, f=1MHz
COB
CLASSIFICATION OF hFE2
Rank
P
Q
Range
82 - 180
120 - 270
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Oct-2009 Rev. C
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