Datasheet > 2SA1797

2SA1797

更新时间： 2024-11-02 06:23:59

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	496K
描述
PNP General Purpose Transistor

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2SA1797 数据手册

2SA1797

PNP

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

High transition frequency

High power dissipation

PACKAGE DIMENSIONS

SOT-89

1. Base

2. Collector

3. Emitter

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Min.

4.40

4.05

1.50

1.30

2.40

0.89

Max.

4.60

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5° TYP.

0.70 REF.

MARKING : AGX

X = hFE Rank Code

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Unit

Parameter

Symbol

Ratings

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-50

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-6

Collector Current -Continuous

Collector Dissipation

-2

0.5

P_C

°C

Junction & Storage temperature

T_J, T_STG

150, -55~150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol Min.

Typ. Max.

Unit

Test Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-50

-6

I_C=-50μA, I_E=0

I_C= -1mA, I_B=0

I_E=-50μA, I_C=0

V_CB=-50V, I_E=0

V_EB=-5 V, I_C=0

-0.1

270

-0.35

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=-2V, I_C= -500mA

I_C=-1A, I_B= -50mA

Collector-emitter saturation voltage

Typical Transition frequency

Output Capacitance

V_CE(sat)

f _T

200

MHz V_CE=-2V, I_C=-500mA, f = 100MHz

C_OB

V_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF hFE2

Rank

Range

82 - 180

120 - 270

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2005 Rev. B

Page 1 of 2

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