生命周期: | Active | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1797L-A-T9N-K | UTC | 暂无描述 |
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2SA1797L-B-T9N-B | UTC | Small Signal Bipolar Transistor |
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2SA1797L-B-T9N-K | UTC | Small Signal Bipolar Transistor |
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|
2SA1797L-B-T9N-R | UTC | Transistor |
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2SA1797L-B-TN3-T | UTC | Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ |
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2SA1797L-X-AA3-R | ROHM | POWER TRANSISTOR |
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