是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 7.21 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 功耗环境最大值: | 2 W |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN COPPER | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.35 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1797T100/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MPT3, 3 P | |
2SA1797T100/PQ | ROHM |
获取价格 |
2A, 50V, PNP, Si, POWER TRANSISTOR | |
2SA1797T100/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MPT3, 3 P | |
2SA1797T100P | ROHM |
获取价格 |
Power Transistor -50V, -3A | |
2SA1797T100Q | ROHM |
获取价格 |
Power Transistor (â50V, â3A) | |
2SA1797T101 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SA1797T101/P | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SA1797T101/PQ | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SA1797T101/Q | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SA1797T101P | ROHM |
获取价格 |
2000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR |