2SA1797
Transistors
Power Transistor (−50V, −3A)
2SA1797
zFeatures
zExternal dimensions (Unit : mm)
1) Low saturation voltage.
MPT3
VCE (sat) = −0.35V (Max.) at I
C
/ IB = −1A / −50mA.
4.5
1.6
1.5
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
(1)
(2)
(3)
zPackaging specifications
0.4
0.5
3.0
0.4
0.4
Type
2SA1797
MPT3
PQ
1.5
1.5
(1)Base
Package
(2)Collector
(3)Emitter
hFE
∗
Marking
Code
AG
T100
1000
Basic ordering unit (pieces)
∗Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−50
−50
−6
Unit
VCBO
VCEO
VEBO
V
V
V
−3
−6
A (DC)
A (Pulse)
Collector current
I
C
∗
1
2
0.5
Collector power
dissipation
2SA1797
P
C
W
2
∗
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
Tj
150
−55~+150
°C
°C
Tstg
∗2 When mounted on a 40+ 40+ 0.7mm ceramic board.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
−50
−50
−6
−
−
−
−
−
−
−
−
−
−
−
V
V
I
I
I
C
=−50µA
=−1mA
C
V
E
=−50µA
CB=−50V
EB=−5V
I
CBO
EBO
CE(sat)
FE
−0.1
−0.1
−0.35
270
µA
µA
V
V
V
Emitter cutoff current
I
∗
∗
Collector-emitter saturation voltage
DC current transfer ratio
V
−0.15
−
I
C
/I
B
=−1A/−50mA
=−2V/−0.5A
CE=−2V, I =0.5A, f=100MHz
CB=−10V, I
−
h
82
V
V
V
CE/IC
Transition frequency
Output capacitance
f
T
−
−
200
36
−
−
MHz
pF
E
Cob
E
=0A, f=1MHz
∗ Measured using pulse current
Rev.B
1/2