Datasheet > 2SA1797

2SA1797

更新时间： 2023-12-06 20:08:29

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	588K
描述
双极型晶体管

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2SA1797 数据手册

2SA1797

SOT-89 Transistor(PNP)

1. ^BASE

SOT-89

2. ^COLLECTOR

3. ^EMITTER

4.6

4.4

1.6

1.4

1.8

1.4

2.6

2.4

4.25

3.75

Features

0.8

MIN

0.53

Low saturation voltage

0.40

0.48

2x)

0.35

1.5

0.44

0.37

0.13

Excellent DC current gain characteristics

Complements to 2SC4672

3.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-50

Units

-50

-6

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

-2

P_C

500

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-50

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-50μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-50μA, I_C=0

V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

-0.1

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=-2V, I_C=-500mA

270

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-1A, I_B=-50mA

-0.35

V_CE=-2V, I_C=-0.5A, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

200

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

82-180

AGP

120-270

Marking

AGQ

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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