Datasheet > 2SA1797

2SA1797

更新时间： 2024-11-02 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
4页	852K
描述
SOT-89 Plastic-Encapsulate Transistors

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2SA1797 数据手册

WILLAS

2SA1797

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FEATURES

SOT-89

Low saturation voltage

Excellent DC current gain characteristics

1. BASE

Pb-Free package is available

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

2. ^COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-50

Units

-50

-6

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

-2

P_C

500

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-50

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-50µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-50µA, I_C=0

V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

-0.1

µA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=-2V, I_C=-500mA

270

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-1A, I_B=-50mA

-0.35

V_CE=-2V, I_C=-0.5A, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

200

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

82-180

AGP

120-270

Marking

AGQ

2012-10

WILLAS ELECTRONIC CORP.

12 3 4

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