Datasheet > 2SA1734T2G/D

2SA1734T2G/D

更新时间： 2024-09-18 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	54K
描述
PNP Medium Power Silicon High Current Transistor

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2SA1734T2G/D 数据手册

2SA1734T2G

Preferred Device

PNP Silicon Transistor

The device is housed in the SOT-89 package, which is designed for

medium power surface mount applications.

• High Current: 1.2 Amp

• Available in 7 inch/1000 unit Tape and Reel

• Device Marking: SA

http://onsemi.com

MEDIUM POWER

PNP SILICON

HIGH CURRENT

TRANSISTOR

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

−30

−40

−6

Unit

Vdc

Adc

CEO

CBO

EBO

SURFACE MOUNT

−1.2

Total Power Dissipation

(Note 1)

COLLECTOR 2

@ T = 25°C

1.56

0.67

5.0

Watts

mW/°C

Watts

Derate above 25°C

(Note 2)

BASE

mW/°C

Operating and Storage

Temperature Range

T , T

−65 to 150

°C

stg

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance

Junction-to-Ambient

(surface mounted)

°C/W

MARKING DIAGRAM

(Note 1)

(Note 2)

190

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

260

°C

Sec

SOT−89

CASE 1213

STYLE 2

1. FR−4 @ 1.0 X 1.0 inch Pad 2.0 oz. Cu PCB

2. FR−4 @ Minimum Pad

= Year Code

M = Month Code

SA= Device Code

ORDERING INFORMATION

Device

Package

Shipping

2SA1734T2G

SOT−89

1000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

August, 2003 − Rev. 0

2SA1734T2G/D

12 3 4

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