Datasheet > 2SA1736

2SA1736

更新时间： 2024-09-19 06:23:19

品牌	Logo	应用领域
科信 - KEXIN		晶体开关晶体管电源开关
页数	文件大小	规格书
3页	432K
描述
Power Switching Applications

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中文翻译

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数据手册

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2SA1736 数据手册

SMD Type

Transistors

Power Switching Applications

2SA1736

Features

Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1.5A)

High Speed Switching Time: tstg = 0.2ìs(typ.)

Small Flat Package

PC = 1 to 2W (mounted on ceramic substrate)

Complementary to 2SC4541

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

Rating

-60

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

-6

-3

Base Current

I^B

-0.6

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1000

150

Jumction temperature

Storage temperature Range

Tstg

-55 to +150

* Mounted on ceramic substrate (250 mm²x 0.8 t)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-0.1

Unit

ìA

Collector Cut-off Current

Emitter Cut-off Current

VCB = -60V , IE = 0

VEB = -6V , IC = 0

Collector-Emitter Breakdown Voltage

V^(BR)CEOIC = -10mA , IB = 0

-50

120

V^CE= -2V , IC = -100mA

h^FE

V^CE= -2V , IC = -2A

400

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

V^CE(sat)IC = -1.5A , IB = -75mA

V^BE(sat)IC = -1.5A , IB = -75mA

-0.5

-1.2

f^T

VCE = -2V , IC = -100mA

100

MHz

Collector Output Capacitance

C^ob

VCB = -10V , IE = 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

0.1

0.2

0.1

See Test Circuit.

ìs

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