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2SA1739 PDF预览

2SA1739

更新时间: 2024-11-21 06:23:59
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 50K
描述
Silicon PNP Epitaxial Planar Type

2SA1739 数据手册

  
SMD Type  
Transistors  
Silicon PNP Epitaxial Planar Type  
2SA1739  
Features  
High speed switching.  
Low collector-emitter saturation voltage VCE(sat).  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-15  
Unit  
V
-15  
V
-4  
V
Collector current  
-50  
mA  
mA  
mW  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
-100  
150  
PC  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
50  
Typ  
-0.1  
Max  
-0.1  
-0.1  
150  
-0.2  
Unit  
ìA  
Collector-base cutoff current  
Emitter-base cutoff current  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Transition frequency  
VCB = -8 V, IE = 0  
IEBO  
VCE = -3 V, IC = 0  
ìA  
hFE  
VCE = -1 V, IC = -10 mA  
VCE(sat) IC = -10 mA, IB = -1 mA  
V
fT  
VCB = -10 V, IE = 10 mA, f = 200 MHz  
800 1500  
1
MHz  
pF  
Collector output capacitance  
Cob  
VCB = -5 V, IE = 0, f = 1 MHz  
Turn-on time  
Turn-off time  
Storage time  
ton  
toff  
tstg  
12  
20  
19  
ns  
ns  
ns  
hFE Classification  
AX  
Marking  
Rank  
hFE  
Q
R
No-rank  
50 150  
50 120  
90 150  
1
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