Datasheet > 2SA1737

2SA1737

更新时间： 2024-11-20 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
2页	43K
描述

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中文翻译

获取价格

数据手册

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2SA1737 数据手册

Transistor

2SA1737

Silicon PNP epitaxial planer type

For video amplifier

Unit: mm

1.5±0.1

4.5±0.1

1.6±0.2

Features

High transition frequency f_T.

■

●

Small collector output capacitance C_ob.

45°

●

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

0.4±0.08

0.4±0.04

0.5±0.08

1.5±0.1

3.0±0.15

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–85

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

marking

–85

–4

–100

–50

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

Marking symbol : 1E

T_j

150

˚C

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CEO

Conditions

V_CE= –60V, I_B= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

–10

V_CBO

V_CEO

V_EBO

h_FE

I_C= –100µA, I_E= 0

–85

–4

I_C= –1mA, I_B= 0

I_E= –100µA, I_C= 0

Forward current transfer ratio

V_CE= –5V, I_C= –10mA

I_C= –10mA, I_B= –1mA

V_CB= –5V, I_E= 10mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

Collector to emitter saturation voltage V_CE(sat)

– 0.5

MHz

Transition frequency

f_T

500

2.7

Collector output capacitance

C_ob

中文翻译

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