2SA1740
SOT-89 Transistor(PNP)
1. BASE
SOT-89
2. COLLECTOR
4.6
B
4.4
1.6
1.4
1
1.8
1.4
3. EMITTER
2
2.6
4.25
3.75
3
2.4
Features
0.8
MIN
0.53
0.40
2x)
0.48
0.35
1.5
0.44
0.37
High breadown voltage
Excellent hFE linearlity
0.13
B
3.0
Dimensions in inches and (millimeters)
Marking: AK
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
-400
-400
-5
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
V
V
Collector Current -Continuous
Collector Dissipation
-200
500
mA
mW
℃
PC
TJ
Junction Temperature
Storage Temperature
150
Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-400
-400
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO IC=-10μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-10μA,IC=0
V
V
ICBO
IEBO
hFE
VCB=-300V,IE=0
-100
-100
200
-0.6
-1
nA
nA
VEB=-4V,IC=0
DC current gain
VCE=-10V,IC=-50mA
IC=-50mA,IB=-5mA
IC=-50mA,IB=-5mA
VCE=-30V,IC=-10mA
VCB=-30V,IE=0,f=1MHz
60
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
70
5
MHz
pF
μs
Collector output capacitance
Turn-ON Time
Cob
ton
0.25
5
VCC=-150V,Ic=-50mA,
IB1=-IB2=-5mA
Turn-OFF Time
toff
μs
CLASSIFICATION OF hFE
D
E
Rank
60-120
100-200
Range
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Revision:20170701-P1
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