JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SA1740 TRANSISTOR (PNP)
1. BASE
FEATURES
z
High breadown voltage
Excellent hFE linearlity
2. COLLECTOR
3. EMITTER
z
Marking: AK
A K
Solid dot = Green molding compound device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-400
-400
-5
VCEO
VEBO
IC
V
V
Collector Current -Continuous
-200
500
mA
mW
℃
PC
Collector Dissipation
TJ,Tstg
Operation Junction and Storage Temperature Range
-55~150
RθJA
Thermal Resistance from Junction to Ambient
250
℃
/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
-400
-400
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO IC=-10μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-10μA,IC=0
V
V
ICBO
IEBO
hFE
VCB=-300V,IE=0
-100
-100
200
-0.6
-1
nA
nA
VEB=-4V,IC=0
DC current gain
VCE=-10V,IC=-50mA
IC=-50mA,IB=-5mA
IC=-50mA,IB=-5mA
VCE=-30V,IC=-10mA
VCB=-30V,IE=0,f=1MHz
60
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
70
5
MHz
pF
μs
Collector output capacitance
Turn-ON Time
Cob
ton
0.25
5
VCC=-150V,Ic=-50mA,
IB1=-IB2=-5mA
Turn-OFF Time
toff
μs
CLASSIFICATION OF hFE
D
E
Rank
60-120
100-200
Range
www.jscj-elec.com
1
Rev. - 2.2