Transistor
2SA1738
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
2.8 –+00..32
0.65±0.15
1.5 +–00..0255
0.65±0.15
Features
High-speed switch (pair with 2SC3757)
■
●
●
Low collector to emitter saturation voltage VCE(sat)
.
1
2
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
3
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
–15
Unit
V
0.1 to 0.3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
0.4±0.2
–15
V
–4
V
–100
–50
mA
mA
mW
˚C
1:Base
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2:Emitter
3:Collector
IC
Collector power dissipation
Junction temperature
Storage temperature
PC
200
Marking symbol : AK
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
IEBO
Conditions
min
typ
max
– 0.1
– 0.1
150
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = –8V, IE = 0
VEB = –3V, IC = 0
µA
*
hFE1
hFE2
VCE = –1V, IC = –10mA
VCE = –1V, IC = –1mA
IC = –10mA, IB = –1mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –5V, IE = 0, f = 1MHz
(Note 1) Next page
50
30
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
– 0.1
1500
1
– 0.2
V
MHz
pF
Transition frequency
Collector output capacitance
Turn-on time
fT
800
Cob
ton
toff
tstg
12
ns
Turn-off time
(Note 1) Next page
20
ns
Storage time
(Note 1) Next page
19
ns
*hFE1 Rank classification
Rank
hFE1
Q
R
50 ~ 120
90 ~ 150
1