2SA1740

更新时间： 2024-11-10 04:25:51

品牌	Logo	应用领域
TRSYS		晶体晶体管放大器
页数	文件大小	规格书
1页	64K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SA1740 数据手册

Transys

Electronics

I M I T E D

SOT-89 Plastic-Encapsulated Transistors

SOT-89

2SA1740 TRANSISTOR (PNP)

1. ^BASE

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM

: 500

mW (Tamb=25℃)

Collector current

I_CM

: -200

Collector-base voltage

V_(BR)CBO: -400

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-1mA, I_B=0

MIN

-400

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=-10µA, I_C=0

V_CB=-300V, I_E=0

V_EB=-4V, I_C=0

µA

-0.1

200

-0.8

-1

I_EBO

h_FE(1)

V_CE(sat)

V_BE(sat)

f_T

DC current gain

_CE=-10V, I_C=-50mA

I_C=-50mA, I_B=-5mA

V_CE=-30V, I_C=-10mA

_CB=-30V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

MHz

µs

C_ob

Collector output capacitance

Turn-ON Time

t_on

0.25

V_CC=-150V, I_c=-50mA,

I_B1=-I_B2=-5mA

t_off

Turn-OFF Time

µs

CLASSIFICATION OF h_FE(1)

Rank

Range

60-120

100-200

Marking

中文翻译

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2SA1740_09	UTC	获取价格	HIGH VOLTAGE DRIVER APPLICATION
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2SA1740_15	WINNERJOIN	获取价格	PNP TRANSISTOR
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2SA1740D	UTC	获取价格	Transistor
2SA1740D	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,400MA I(C),SOT-223
2SA1740-D-AB3-R	UTC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89
2SA1740D-TD-E	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,200MA I(C),SOT-89
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