Datasheet > 2SA1739R

2SA1739R

更新时间： 2024-11-20 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	53K
描述
TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 50MA I(C) \| SC-70

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中文翻译

获取价格

数据手册

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2SA1739R 数据手册

Transistor

2SA1739

Silicon PNP epitaxial planer type

For high speed switching

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

High-speed switch (pair with 2SC3938)

Low collector to emitter saturation voltage V_CE(sat)

■

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–15

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

0.2±0.1

–15

–4

–100

–50

˚C

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

Marking symbol : AX

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

Conditions

min

typ

max

– 0.1

150

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= –8V, I_E= 0

V_EB= –3V, I_C= 0

µA

h_FE1

h_FE2

V_CE= –1V, I_C= –10mA

V_CE= –1V, I_C= –1mA

I_C= –10mA, I_B= –1mA

V_CB= –10V, I_E= 10mA, f = 200MHz

V_CB= –5V, I_E= 0, f = 1MHz

(Note 1) Next page

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

– 0.1

1500

– 0.2

MHz

Transition frequency

Collector output capacitance

Turn-on time

f_T

800

C_ob

t_on

t_off

t_stg

Turn-off time

(Note 1) Next page

Storage time

(Note 1) Next page

^*h_FE1Rank classification

Rank

h_FE1

50 ~ 120

90 ~ 150

12 3

中文翻译

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