Datasheet > 2SA1213_09

2SA1213_09

更新时间： 2024-11-09 07:29:35

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
5页	195K
描述
Power Amplifier Applications Power Switching Applications

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数据手册

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2SA1213_09 数据手册

2SA1213

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1213

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

= −0.5 V (max) (I = −1 A)

CE (sat)

High speed switching time: t

Small flat package

= 1.0 μs (typ.)

stg

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SC2873

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−2

PW-MINI

JEDEC

Base current

−0.4

500

―

JEITA

SC-62

2-5K1A

Collector power dissipation

TOSHIBA

1000

(Note 1)

Weight: 0.05 g (typ.)

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4 5

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