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2SA1213-O PDF预览

2SA1213-O

更新时间: 2024-10-01 07:29:35
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 469K
描述
PNP Silicon Epitaxial Transistors

2SA1213-O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

2SA1213-O 数据手册

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2SA1213-O  
2SA1213-Y  
M C C  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
PNP Silicon  
Epitaxial Transistors  
RoHS Compliant. See ordering information)  
xꢀ Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A)  
xꢀ Small flat package  
xꢀ PC=1.0 to 2.0W(mounted on ceramic substrate)  
High Speed Switching Time : tstg =1.0µs(typ.)  
xꢀ  
·Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
SOT-89  
Maximum Ratings  
A
K
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
-50  
Unit  
V
B
-50  
V
-5.0  
-2.0  
-0.4  
0.5  
1.0*  
150  
V
A
E
IB  
Base Current  
A
C
PC  
Collector power dissipation  
W
D
TJ  
Junction Temperature  
Storage Temperature  
к
к
TSTG  
-55 to +150  
G
H
J
* Mounted on ceramic substrate (250mm2 x 0.8t)  
F
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
-50  
---  
---  
---  
---  
---  
-0.1  
-0.1  
Vdc  
uAdc  
uAdc  
1
2
3
ICBO  
Collector-Base Cutoff Current  
(VCB=50Vdc,IE=0)  
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, IC=0)  
---  
ON CHARACTERISTIC  
1. Base  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
DC Current Gain  
(IC=0.5Adc, VCE=2.0Vdc)  
DC Current Gain *  
(IC=2.0Adc, VCE=2.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=1.0Adc, IB=0.05Adc)  
Base-Emitter Saturation Voltage  
(IC=1.0Adc,IB=0.05Adc)  
70  
20  
---  
---  
---  
240  
---  
---  
---  
2. Collector  
3. Emitter  
---  
-0.5  
-1.2  
---  
Vdc  
Vdc  
MHz  
pF  
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ꢁꢂꢃꢀ  
ꢂꢅꢇꢈꢄꢆꢀ  
ꢃꢃꢀ  
ꢅꢋꢌꢄꢆꢀ  
---  
---  
ꢃꢂꢅꢀ  
ꢃꢉꢊꢀ  
ꢃꢂꢅꢀ  
ꢒꢍꢐꢓꢀ  
ꢎꢍꢔꢕꢀ  
ꢐꢍꢓꢎꢀ  
ꢕꢍꢑꢕꢀ  
ꢘꢍꢐꢒꢀ  
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ꢒꢍꢔꢕꢀ  
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ꢒꢍꢎꢓꢀ  
ꢎꢍꢕꢕꢀ  
ꢘꢍꢗꢒꢀ  
ꢚꢚꢚꢚꢚꢀ  
ꢉꢀ  
ꢖꢀ  
ꢇꢀ  
ꢁꢀ  
ꢄꢀ  
ꢙꢀ  
ꢝꢀ  
ꢈꢀ  
ꢞꢀ  
ꢍꢎꢏꢐꢀ  
ꢍꢕꢔꢐꢀ  
ꢍꢎꢗꢒꢀ  
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ꢍꢎꢎꢑꢀ  
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ꢍꢕꢎꢗꢀ  
ꢍꢕꢎꢗꢀ  
ꢍꢕꢗꢗꢀ  
ꢍꢎꢑꢎꢀ  
ꢍꢕꢏꢎꢀ  
ꢍꢎꢔꢗꢀ  
ꢍꢕꢐꢓꢀ  
ꢍꢎꢕꢕꢀ  
ꢚꢚꢚꢚꢚꢀ  
Transition Frequency  
100  
---  
120  
40  
(VCE=2.0Vdc, IC=0.5Adc)  
Collector output capacitance  
(VCB=10Vdc, f=1.0MHz)  
Cob  
---  
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ꢍꢕꢎꢓꢀ  
ꢍꢕꢘꢎꢀ  
ꢍꢕꢎꢔꢀ  
ꢍꢕꢔꢐꢀ  
ꢕꢍꢒꢑꢀ  
ꢕꢍꢗꢐꢀ  
ꢕꢍꢒꢎꢀ  
ꢎꢍꢔꢕꢀ  
CLASSIFICATION OF HFE (1)  
Rank  
Range  
Marking  
O
Y
 ꢀ  
70-140  
NO  
120-240  
NY  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/0/101  

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