2SA1213PTYGP

更新时间： 2024-11-20 13:00:55

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	143K
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2SA1213PTYGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SA1213PT

SMALL FLAT

PNP Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 2 Ampere

APPLICATION

* Power amplifier .

FEATURE

* Small flat package. (SC-62/SOT-89)

SC-62/SOT-89

* Low saturation voltage VCE(sat)

=-0.5V(max.)(IC=-1A)

* High speed switching time: t^stg= 1.0uSec (typ.)

* PC= 1.0 to 2.0W (mounted on ceramic substrate).

* High saturation current capability.

4.6MAX.

1.7MAX.

1.6MAX.

0.4+0.05

CONSTRUCTION

* PNP Switching Transistor

+0.08

0.45-0.05

+0.08

0.40-0.05

MARKING

* HFE(O):NO

* HFE(Y):NY

1.50+0.1

1 Base

2 Collector ( Heat Sink )

3 Emitter

CIRCUIT

Dimensions in millimeters

SC-62/SOT-89

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

-50

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-50

-5

Volts

Amps

^oC

Open Collector

-2

Peak Collector Current

Peak Base Current

ICM

-2

IBM

-0.4

1000

+150

Total Power Dissipation

Storage Temperature

Junction Temperature

Operating Ambient Temperature

TA ≤ 25^OC; Note 1

PTOT

TSTG

-55

^oC

TAMB

-55

^oC

Note

1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

2002-10

12 3 4

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