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2SA1213OTE12R PDF预览

2SA1213OTE12R

更新时间: 2024-02-21 17:36:00
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 189K
描述
TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SA1213OTE12R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.67
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SA1213OTE12R 数据手册

 浏览型号2SA1213OTE12R的Datasheet PDF文件第2页浏览型号2SA1213OTE12R的Datasheet PDF文件第3页浏览型号2SA1213OTE12R的Datasheet PDF文件第4页浏览型号2SA1213OTE12R的Datasheet PDF文件第5页 
2SA1213  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1213  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low saturation voltage: V  
= 0.5 V (max) (I = 1 A)  
CE (sat)  
C
High speed switching time: t  
Small flat package  
= 1.0 μs (typ.)  
stg  
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)  
Complementary to 2SC2873  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
I
2  
C
PW-MINI  
JEDEC  
Base current  
I
0.4  
500  
B
P
P
C
C
JEITA  
SC-62  
2-5K1A  
Collector power dissipation  
mW  
TOSHIBA  
1000  
(Note 1)  
Weight: 0.05 g (typ.)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-12-21  

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