2SA1215

更新时间： 2024-01-18 10:51:02

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管放大器局域网
页数	文件大小	规格书
1页	26K
描述
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

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数据手册

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2SA1215 数据手册

LAP T 2 S A1 2 1 5

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)

Application : Audio and General Purpose

■Electrical Characteristics

External Dimensions MT-200

■Absolute maximum ratings

(Ta=25°C)

Symbol

V^CBO

VCEO

VEBO

2SA1215

Symbol

I^CBO

Conditions

V^CB=–160V

Unit

µA

Unit

±0.2

6.0

±0.3

36.4

–160

–100max

–160min

50min

±0.2

24.4

2.1

–160

IEBO

V^EB=–5V

±0.1

2-ø3.2

–5

V(BR)CEO

hFE

I^C=–25mA

V^CE=–4V, IC=–5A

I^C=–5A, IB=–0.5A

V^CE=–12V, IE=2A

V^CB=–10V, f=1MHz

–15

–2.0max

50typ

VCE(sat)

MHz

–4

150(Tc=25°C)

150

°C

400typ

COB

+0.2

Tstg

0.65

-0.1

–55 +150

+0.2

-0.1

hFE Rank O(50 100), P(70 140), Y(90 180)

1.05

+0.3

-0.1

3.0

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 18.4g

a. Type No.

b. Lot No.

V^CC

(V)

R^L

I^C

V^B2

(V)

IB1

IB2

ton

tstg

(Ω)

(A)

(mA)

(µs)

–60

–5

–500

500

0.25typ

0.85typ

0.2typ

–

I^CV^CECharacteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CV^BETemperature Characteristics (Typical)

(VCE=–4V)

–15

–16

–12

–8

–3

–10

–5

–2

–1

–50mA

IC=–10A

–4

I^B=–20mA

–5A

–1

–2

–3

–4

–0.2

–0.4

–0.6

–0.8

–1.0

–1

–2

Collector-Emitter Voltage VCE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=–4V)

200

125˚C

100

Typ

25˚C

100

0.5

–30˚C

–0.02

0.1

–0.5

Collector Current I^C(A)

–5

–0.1

–0.5

–1

–5 –10 –15

–0.1

–1

–10 –15

100

Time t(ms)

1000 2000

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

160

–40

120

–10

–5

–1

Without Heatsink

Natural Cooling

–0.5

Without Heatsink

–0.2

–2

–10

–100 –200

0.02

0.1

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current I^E(A)

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