Datasheet > 2SA1213U

2SA1213U

更新时间： 2024-11-18 14:52:39

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	263K
描述
功率三极管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1213U 数据手册

2SA1213U

PNP Silicon Epitaxial Planar Power Transistor

Features

• The transistor is subdivided into two groups, O and Y,

according to its DC current gain.

Applications

• For power amplifier and power switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Base Current

-I_B

0.4

0.5 ¹⁾

Total Power Dissipation

P_tot

1 ²⁾

Junction Temperature

℃

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

250 ¹⁾

125 ²⁾

Thermal Resistance from Junction to Ambient

℃/W

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 06/06/2023 Rev: 05

12 3 4 5

中文翻译

下载PDF

与2SA1213U相关器件

型号	品牌	获取价格	描述	数据表
2SA1213Y	TOSHIBA	获取价格	Power Amplifier Applications
2SA1213-Y	TOSHIBA	获取价格	TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PI
2SA1213-Y	MCC	获取价格	PNP Silicon Epitaxial Transistors
2SA1213-Y	YANGJIE	获取价格	SOT-89
2SA1213-Y(T2LD,ZC)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SA1213-Y(TE12L,C)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SA1213Y(TE12L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),SOT-89
2SA1213-Y(TE12L,ZC	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SA1213-Y(TE12R,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SA1213YGP	CHENMKO	获取价格	Transistor,