5秒后页面跳转
2SA1213-O-T PDF预览

2SA1213-O-T

更新时间: 2024-02-01 07:13:20
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 245K
描述
Transistor

2SA1213-O-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92JESD-609代码:e0
湿度敏感等级:1端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

2SA1213-O-T 数据手册

 浏览型号2SA1213-O-T的Datasheet PDF文件第2页浏览型号2SA1213-O-T的Datasheet PDF文件第3页 
2SA1213  
2SA1213-O  
2SA1213-Y  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
xꢀ Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A)  
xꢀ Small flat package  
PNP Silicon  
Epitaxial Transistors  
xꢀ PC=1.0 to 2.0W(mounted on ceramic substrate)  
High Speed Switching Time : tstg =1.0µs(typ.)  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
xꢀ  
x
Maximum Ratings  
SOT-89  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
-50  
Unit  
V
-50  
V
-5.0  
-2.0  
-0.4  
0.5  
1.0*  
150  
V
A
A
K
IB  
Base Current  
A
B
PC  
Collector power dissipation  
W
TJ  
Junction Temperature  
Storage Temperature  
к
к
TSTG  
-55 to +150  
E
* Mounted on ceramic substrate (250mm2 x 0.8t)  
C
Electrical Characteristics @ 25к Unless Otherwise Specified  
D
J
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
G
H
OFF CHARACTERISTICS  
J
F
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
-50  
---  
---  
---  
---  
---  
-0.1  
-0.1  
Vdc  
uAdc  
uAdc  
ICBO  
Collector-Base Cutoff Current  
(VCB=50Vdc,IE=0)  
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, IC=0)  
---  
1
2
3
ON CHARACTERISTIC  
1. Emitter  
2. Collector  
3. Base  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
DC Current Gain  
(IC=0.5Adc, VCE=2.0Vdc)  
DC Current Gain *  
(IC=2.0Adc, VCE=2.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=1.0Adc, IB=0.05Adc)  
Base-Emitter Saturation Voltage  
(IC=1.0Adc,IB=0.05Adc)  
70  
20  
---  
---  
---  
240  
---  
---  
---  
---  
-0.5  
-1.2  
---  
Vdc  
Vdc  
MHz  
pF  
---  
---  
ꢁꢂꢃꢄꢅꢆꢂꢅꢆꢀ  
Transition Frequency  
100  
---  
120  
40  
ꢁꢂꢃꢀ  
ꢂꢅꢇꢈꢄꢆꢀ  
ꢃꢃꢀ  
ꢅꢋꢌꢄꢆꢀ  
(VCE=2.0Vdc, IC=0.5Adc)  
Collector output capacitance  
(VCB=10Vdc, f=1.0MHz)  
ꢃꢂꢅꢀ  
ꢃꢉꢊꢀ  
ꢃꢂꢅꢀ  
ꢒꢍꢐꢓꢀ  
ꢎꢍꢔꢕꢀ  
ꢐꢍꢓꢎꢀ  
ꢕꢍꢑꢕꢀ  
ꢘꢍꢐꢒꢀ  
ꢐꢍꢕꢕꢀ  
ꢕꢍꢐꢐꢀ  
ꢕꢍꢐꢑꢀ  
ꢕꢍꢐꢑꢀ  
ꢎꢍꢒꢕꢀ  
ꢃꢉꢊꢀ  
ꢒꢍꢔꢕꢀ  
ꢎꢍꢑꢕꢀ  
ꢒꢍꢎꢓꢀ  
ꢎꢍꢕꢕꢀ  
ꢘꢍꢗꢒꢀ  
ꢚꢚꢚꢚꢚꢀ  
ꢉꢀ  
ꢖꢀ  
ꢇꢀ  
ꢁꢀ  
ꢄꢀ  
ꢙꢀ  
ꢝꢀ  
ꢈꢀ  
ꢞꢀ  
ꢍꢎꢏꢐꢀ  
ꢍꢕꢔꢐꢀ  
ꢍꢎꢗꢒꢀ  
ꢍꢕꢐꢎꢀ  
ꢍꢕꢓꢘꢀ  
ꢍꢎꢎꢑꢀ  
ꢍꢕꢎꢐꢀ  
ꢍꢕꢎꢗꢀ  
ꢍꢕꢎꢗꢀ  
ꢍꢕꢗꢗꢀ  
ꢍꢎꢑꢎꢀ  
ꢍꢕꢏꢎꢀ  
ꢍꢎꢔꢗꢀ  
ꢍꢕꢐꢓꢀ  
ꢍꢎꢕꢕꢀ  
ꢚꢚꢚꢚꢚꢀ  
Cob  
---  
*hFE(1) classification O:70-140, Y:120-240  
CLASSIFICATION OF HFE (1)  
ꢌꢛꢜꢀ  
Rank  
Range  
Marking  
O
Y
ꢍꢕꢎꢓꢀ  
ꢍꢕꢘꢎꢀ  
ꢍꢕꢎꢔꢀ  
ꢍꢕꢔꢐꢀ  
ꢕꢍꢒꢑꢀ  
ꢕꢍꢗꢐꢀ  
ꢕꢍꢒꢎꢀ  
ꢎꢍꢔꢕꢀ  
70-140  
NO  
120-240  
NY  
 ꢀ  
www.mccsemi.com  
1 of 3  
Revision: 3  
2007/03/01  

与2SA1213-O-T相关器件

型号 品牌 描述 获取价格 数据表
2SA1213OTE12L TOSHIBA TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign

获取价格

2SA1213OTE12R TOSHIBA TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign

获取价格

2SA1213-O-TP MCC 暂无描述

获取价格

2SA1213-O-TP-HF MCC 暂无描述

获取价格

2SA1213PT CHENMKO PNP Epitaxial Transistor

获取价格

2SA1213PTOGP CHENMKO Transistor,

获取价格