Datasheet > 2SA1213-O

2SA1213-O

更新时间： 2024-02-26 10:01:18

品牌	Logo	应用领域
东芝 - TOSHIBA		开关晶体管
页数	文件大小	规格书
5页	189K
描述
TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA1213-O 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	SC-62
包装说明：	SMALL OUTLINE, R-PSSO-F3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.67
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	50 V	配置：	SINGLE
最小直流电流增益 (hFE)：	70	JESD-30 代码：	R-PSSO-F3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	功耗环境最大值：	0.5 W
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	120 MHz
VCEsat-Max：	0.5 V	Base Number Matches：	1

2SA1213-O 数据手册

2SA1213

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1213

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

= −0.5 V (max) (I = −1 A)

CE (sat)

High speed switching time: t

Small flat package

= 1.0 μs (typ.)

stg

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SC2873

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−2

PW-MINI

JEDEC

Base current

−0.4

500

―

JEITA

SC-62

2-5K1A

Collector power dissipation

TOSHIBA

1000

(Note 1)

Weight: 0.05 g (typ.)

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4 5

下载PDF

与2SA1213-O相关器件

型号	品牌	描述	获取价格	数据表
2SA1213O(TE12L)	TOSHIBA	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),SOT-89	获取价格
2SA1213O(TE12L,F)	TOSHIBA	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),SOT-89	获取价格
2SA1213-O-T	MCC	Transistor	获取价格
2SA1213OTE12L	TOSHIBA	TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign	获取价格
2SA1213OTE12R	TOSHIBA	TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign	获取价格
2SA1213-O-TP	MCC	暂无描述	获取价格