Datasheet > 2SA1213-G

2SA1213-G

更新时间： 2024-10-02 01:23:59

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	155K
描述
General Purpose Transistor

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中文翻译

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数据手册

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2SA1213-G 数据手册

General Purpose Transistor

2SA1213-G Series (PNP)

RoHS Device

Features

-Small flat package.

1 : Base

2 : Collector

3 : Emitter

SOT-89-3L

-Power amplifier and switching

-applications.

0.181(4.60)

0.173(4.40)

-Low saturation voltage.

0.061(1.55)

REF.

-High speed switching time.

0.102(2.60)

0.091(2.30)

0.167(4.25)

0.155(3.94)

Maximum Ratings (at TA=25°C unless otherwise noted)

0.020(0.52)

0.023(0.58)

0.016(0.40)

Symbol

VCBO

VCEO

VEBO

0.013(0.32)

Parameter

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Value

-50

-5

Unit

0.060(1.50)

TYP.

0.118(3.00)

TYP.

0.063(1.60)

0.055(1.40)

Continuous current

-2

Collector power dissipation

500

Thermal resistance from

junction to ambient

RθJA

250

°C/W

0.017(0.44)

0.014(0.35)

0.047(1.20)

0.035(0.90)

Junction temperature

Storage temperature

150

°C

Dimensions in inches and (millimeter)

Tstg

-55~+150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Conditions

Min

-50

-5

Typ

Max

Unit

IC =-0.1mA , IE=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC =-10mA , IB=0

IE =-0.1mA , IC=0

VCB=-50V , IE=0

-100

240

VEB=-5V , IC=0

Emitter cut-off current

IEBO

VCE=-2V , IC=-500mA

VCE=-2V , IC=-2A

IC=-1A , IB=-50mA

VCB=-10V , IE=0 , f=1MHZ

VCE=-2V , IC=-0.5A

DC current gain

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

VCE(sat)

VBE(sat)

Cob

-0.5

-1.2

100

MHZ

Classification Of hFE

2SA1213O-G

70-140

Part No.

2SA1213Y-G

120-240

Range

Marking

REV: A

Page 1

Company reserves the right to improve product design , functions and reliability without notice.

QW-BTR42

12 3 4

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