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2N7002KT PDF预览

2N7002KT

更新时间: 2024-01-29 17:10:14
品牌 Logo 应用领域
WEITRON /
页数 文件大小 规格书
5页 627K
描述
N-Channel ENHANCEMENT MODE POWER MOSFET

2N7002KT 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002KT 数据手册

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2N7002KT  
Electrical Characteristics (T =25°C unless otherwise specified,per element)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS(Note2)  
Drain-Source Breakdown Voltage  
VGS=0V, ID=10µA  
-
-
-
-
V
60  
-
(BR)DSS  
V
Zero Gate Voltage Drain Current  
VDS=60V, VGS=0V  
µA  
I
1.0  
10  
DSS  
Gate-source Leakage  
VGS= 20V, VDS=0V  
µA  
I
-
GSS  
ON CHARACTERISTICS(Note2)  
Gate Threshold Voltage  
VDS=VGS, ID=250µA  
V
2.0  
1.0  
-
1.5  
-
V
GS(th)  
Static Drain-Source On-Resistance  
VGS=10V, ID=0.5A  
VGS=5V, ID=0.05A  
R
7.5  
7.5  
DS(ON)  
Forward transfer admittance  
VDS=10V, ID=0.2A  
gfs*  
-
-
80  
mS  
pF  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
-
-
-
25  
10  
3.0  
C
C
C
iss  
50  
25  
5.0  
VDS=25V,  
f=1.0MHz  
VGS=0V,  
Output Capacitance  
VDS=25V, f=1.0MHz  
oss  
rss  
VGS=0V,  
Reverse Transfer Capacitance  
VDS=25V, f=1.0MHz  
VGS=0V,  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
-
-
T
*
12  
20  
20  
30  
D(ON)  
=30V  
ID=0.2A, VDD  
=10Ω  
=10Ω  
VGS=10V, RL=150Ω, RG  
nS  
T
*
D(OFF)  
=30V  
ID=0.2A, VDD  
VGS=10V, RL=150Ω, RG  
*Pw ≤ 300µs, Duty cycle ≤ 1%  
WEITRON  
http://www.weitron.com.tw  
2/5  
14-Sep-09  

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