Datasheet > 2N7002DWL-AL6-R

2N7002DWL-AL6-R

更新时间： 2022-09-16 16:07:48

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	286K
描述
300mA, 60V DUAL N-CHANNEL POWER MOSFET

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2N7002DWL-AL6-R 数据手册

2N7002DW

Power MOSFET

TYPICAL CHARACTERISTICS

On-Resistance Varisation with Drain

On-Resistance Varisation with Temperature

Current and Temperature

V_GS=10V

I_D=300mA

2.5

1.75

1.5

T_J=125°C

25°C

1.25

1.5

0.5

0.75

0.5

150

0.4

1.2

Drain Current,I_D(A)

1.6

75 100 125

0.8

Junction Temperature, T_J(°C)

Gate Threshold Varisation with Temperature

Transfer Characteristics

1.1

1.0

0.8

0.6

0.4

V_GS= V_DS

I_D= 1mA

V_DS=10V

25°C

125°C

1.05

0.95

0.9

0.2

0.85

0.8

-25

75 100 125 150

-50

Gate to Source Voltage, V_GS(V)

Junction Temperature, T_J(°C)

UNISONIC TECHNOLOGIES CO., LTD

4 of 6

QW-R502-534.C

www.unisonic.com.tw

1 2 345 6

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