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2N7002DWAQ-13 PDF预览

2N7002DWAQ-13

更新时间: 2022-02-26 11:15:53
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 530K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002DWAQ-13 数据手册

 浏览型号2N7002DWAQ-13的Datasheet PDF文件第1页浏览型号2N7002DWAQ-13的Datasheet PDF文件第2页浏览型号2N7002DWAQ-13的Datasheet PDF文件第3页浏览型号2N7002DWAQ-13的Datasheet PDF文件第5页浏览型号2N7002DWAQ-13的Datasheet PDF文件第6页浏览型号2N7002DWAQ-13的Datasheet PDF文件第7页 
NOT RECOMMENDED FOR NEW DESIGN  
USE DMN65D8LDW  
2N7002DWA  
0.6  
0.5  
0.5  
V
= 10V  
GS  
V
= 4.0V  
GS  
V
= 5.0V  
GS  
V
= 5.0V  
DS  
V
= 4.5V  
0.4  
0.3  
0.2  
V
= 3.5V  
GS  
GS  
0.4  
0.3  
0.2  
T
= 150°C  
A
V
V
= 3.0V  
= 2.5V  
GS  
T
= 125°C  
A
T
= 85°C  
A
0.1  
0
T
= 25°C  
A
0.1  
0
T
= -55°C  
A
GS  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VGS, GATE-SOURCE VOLTAGE (V)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1 Typical Output Characteristic  
Figure 2 Typical Transfer Characteristics  
5.0  
4.5  
4.0  
10  
9
8
V
= 5V  
GS  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
7
6
5
4
3
2
V
= 10V  
GS  
I
= 350mA  
D
0.5  
0
1
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0
2
4
6
8
10 12 14 16 18 20  
VGS, GATE-SOURCE VOLTAGE (V)  
ID, DRAIN-SOURCE CURRENT (A)  
Figure 4 Typical Drain-Source On-Resistance  
vs. Gate-Source Voltage  
Figure 3 Typical On-Resistance vs.  
Drain Current and Gate Voltage  
2.5  
2.0  
10  
9
V
= 4.5V  
GS  
8
7
6
5
4
3
2
V
= 10V  
GS  
I = 115mA  
D
T
= 150°C  
A
T
= 125°C  
A
1.5  
1.0  
V
GS  
= 5.0V  
I
= 115mA  
D
T
= 85°C  
= 25°C  
= -55°C  
A
T
A
0.5  
0
T
A
1
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
-50 -25  
0
25  
50  
75 100 125 150  
TJ, JUNCTION TEMPERATURE (C)  
ID, DRAIN CURRENT (A)  
Figure 6 On-Resistance Variation with Temperature  
Figure 5 Typical On-Resistance vs.  
Drain Current and Temperature  
4 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
2N7002DWA  
Document number: DS36120 Rev. 9 - 3  

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