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2N6338G PDF预览

2N6338G

更新时间: 2024-11-30 12:56:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 135K
描述
High-Power NPN Silicon Transistors

2N6338G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-3包装说明:CASE 1-07, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1.14外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

2N6338G 数据手册

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2N6338, 2N6341  
High-Power NPN Silicon  
Transistors  
. . . designed for use in industrialmilitary power amplifier and  
switching circuit applications.  
High CollectorEmitter Sustaining Voltage −  
http://onsemi.com  
V
= 100 Vdc (Min) 2N6338  
CEO(sus)  
= 150 Vdc (Min) 2N6341  
High DC Current Gain −  
= 30 120 @ I = 10 Adc  
25 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
h
FE  
C
= 12 (Min) @ I = 25 Adc  
C
Low CollectorEmitter Saturation Voltage −  
= 1.0 Vdc (Max) @ I = 10 Adc  
V
CE(sat)  
C
Fast Switching Times @ I = 10 Adc  
C
t = 0.3 ms (Max)  
r
t = 1.0 ms (Max)  
s
t = 0.25 ms (Max)  
f
PbFree Packages are Available  
*MAXIMUM RATINGS  
TO204AA  
CASE 107  
Rating  
Symbol 2N6338  
2N6341  
180  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
V
120  
100  
CB  
V
CEO  
150  
V
EB  
6.0  
ORDERING INFORMATION  
Collector Current  
Continuous  
Peak  
I
C
Device  
Package  
Shipping  
25  
50  
2N6338  
TO204AA  
100 Units / Tray  
100 Units / Tray  
Base Current  
I
B
10  
Adc  
2N6338G  
TO204AA  
(PbFree)  
Total Device Dissipation  
P
D
@ T = 25_C  
200  
W
W/°C  
2N6341  
TO204AA  
100 Units / Tray  
100 Units / Tray  
C
1.14  
Derate above 25_C  
2N6341G  
TO204AA  
(PbFree)  
Operating and Storage  
Junction  
T , T  
65 to +200  
_C  
J
stg  
Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
JC  
0.875  
_C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*Indicates JEDEC Registered Data.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 Rev. 12  
2N6338/D  

2N6338G 替代型号

型号 品牌 替代类型 描述 数据表
2N6338 ONSEMI

完全替代

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2N6059 ONSEMI

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