Datasheet > 2N6339

2N6339

更新时间： 2024-12-01 06:19:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	171K
描述
isc Silicon NPN Power Transistors

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2N6339 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2N6338/6339/6340/6341

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 100V(Min)- 2N6338

= 120V(Min)- 2N6339

= 140V(Min)- 2N6340

= 160V(Min)- 2N6341

·High Switching Speed

·Low Saturation Voltage-

: V_CE(sat)= 1.0V(Max)@ I_C= 10A

APPLICATIONS

·Designed for use in industrial-military power amplifier and

switching circuit applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

120

140

160

180

100

120

140

150

UNIT

2N6338

2N6339

2N6340

2N6341

2N6338

2N6339

2N6340

2N6341

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

P_C

T_J

Collector Power Dissipation @T_C=25℃

Junction Temperature

200

-65~200

℃

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

0.875

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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与2N6339相关器件

型号	品牌	获取价格	描述	数据表
2N6339ACECC	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 25A I(C) \| TO-204AA
2N6339X	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
2N634	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 300MA I(C) \| TO-9
2N6340	JMNIC	获取价格	Silicon NPN Power Transistors
2N6340	NJSEMI	获取价格	25 AMPERE POWER TRANSISTORS
2N6340	ISC	获取价格	isc Silicon NPN Power Transistors
2N6340	ONSEMI	获取价格	POWER TRANSISTORS NPN SILICON
2N6340	MOSPEC	获取价格	POWER TRANSISTOR(25A,200W)
2N6340	BOCA	获取价格	HIGH-POWER NPN SILICON TRANSISTORS
2N6340	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3