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2N6341

更新时间: 2024-11-04 03:56:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 57K
描述
NPN POWER SILICON TRANSISTOR

2N6341 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.08
最大集电极电流 (IC):25 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N6341 数据手册

 浏览型号2N6341的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 509  
Devices  
Qualified Level  
JANTX  
JANTXV  
2N6338  
2N6341  
MAXIMUM RATINGS  
Ratings  
Symbol 2N6338 2N6341 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
Collector Current  
Total Power Dissipation (1)  
100  
150  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
120  
180  
6.0  
10  
25  
IC  
@ TA = +250C  
@ TC = +1000C  
200  
112  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +175  
Top, T  
stg  
TO-3*  
(TO-204AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 1.14 W/0C for TC = +250C and TC = +2000C  
0.875  
R
qJC  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Symbol  
Min.  
Max.  
Unit  
Vdc  
100  
150  
IC = 50 mAdc  
2N6338  
2N6341  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 50 Vdc  
VCE = 75 Vdc  
Collector-Emitter Cutoff Current  
VCE = 100 Vdc, VBE = 1.5 Vdc  
VCE = 150 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
50  
mAdc  
mAdc  
2N6338  
2N6341  
ICEO  
10  
10  
2N6338  
2N6341  
ICEX  
IEBO  
ICEO  
100  
mAdc  
mAdc  
Collector-Base Cutoff Current  
VCB = 120 Vdc  
VCB = 180 Vdc  
10  
10  
2N6338  
2N6341  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N6341 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N6284 MICROSEMI

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NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6277 MICROSEMI

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PNP POWER SILICON TRANSISTOR

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