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2N6340 PDF预览

2N6340

更新时间: 2024-01-25 18:09:37
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 67K
描述
POWER TRANSISTORS NPN SILICON

2N6340 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, METAL, TO-3, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.77
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

2N6340 数据手册

 浏览型号2N6340的Datasheet PDF文件第2页浏览型号2N6340的Datasheet PDF文件第3页浏览型号2N6340的Datasheet PDF文件第4页 
ON Semiconductort  
High-Power NPN Silicon  
Transistors  
. . . designed for use in industrial–military power amplifier and  
switching circuit applications.  
2N6338  
2N6341  
*
High Collector–Emitter Sustaining Voltage –  
*ON Semiconductor Preferred Device  
V
= 100 Vdc (Min) – 2N6338  
CEO(sus)  
= 150 Vdc (Min) – 2N6341  
25 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
100, 120, 140, 150 VOLTS  
200 WATTS  
High DC Current Gain –  
= 30 – 120 @ I = 10 Adc  
h
FE  
C
= 12 (Min) @ I = 25 Adc  
C
Low Collector–Emitter Saturation Voltage –  
= 1.0 Vdc (Max) @ I = 10 Adc  
V
CE(sat)  
C
Fast Switching Times @ I = 10 Adc  
C
t = 0.3 ms (Max)  
r
t = 1.0 ms (Max)  
s
t = 0.25 ms (Max)  
f
*MAXIMUM RATINGS  
CASE 1–07  
TO–204AA  
(TO–3)  
Rating  
Symbol  
2N6338  
120  
2N6341  
180  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
CB  
V
CEO  
100  
150  
V
EB  
6.0  
Collector Current  
Continuous  
Peak  
I
C
25  
50  
Base Current  
I
B
10  
Adc  
Total Device Dissipation  
P
D
@ T = 25_C  
200  
1.14  
Watts  
W/°C  
C
Derate above 25_C  
Operating and Storage Junction T , T  
Temperature Range  
–65 to +200  
_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
*Indicates JEDEC Registered Data.  
200  
θ
0.875  
_C/W  
JC  
175  
150  
125  
100  
75  
50  
25  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 10  
2N6338/D  

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