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2N6338G PDF预览

2N6338G

更新时间: 2024-02-27 11:46:08
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 135K
描述
High-Power NPN Silicon Transistors

2N6338G 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, METAL, TO-3, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

2N6338G 数据手册

 浏览型号2N6338G的Datasheet PDF文件第1页浏览型号2N6338G的Datasheet PDF文件第2页浏览型号2N6338G的Datasheet PDF文件第4页浏览型号2N6338G的Datasheet PDF文件第5页 
2N6338, 2N6341  
1000  
700  
V
CC  
+ 80 V  
V
= 80 V  
CC  
I /I = 10  
500  
C B  
T = 25°C  
R
C
8.0 OHMS  
t @ V  
d
= 6.0 V  
J
BE(off)  
300  
200  
R
SCOPE  
10 μs  
B
10 OHMS  
+ 11 V  
0
t
r
100  
70  
1N4933  
50  
- 9.0 V  
t , t v 10 ns  
r
f
DUTY CYCLE = 1.0%  
30  
20  
- 5.0 V  
NOTE: For information on Figures 3 and 6, R and R were  
10  
0.3  
B
C
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
varied to obtain desired test conditions.  
I , COLLECTOR CURRENT (AMP)  
C
Figure 2. Switching Time Test Circuit  
Figure 3. TurnOn Time  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
P
(pk)  
0.1  
θ
θ
= r(t) θ  
JC  
= 0.875°C/W MAX  
JC  
0.05  
0.02  
JC  
0.07  
0.05  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
t
1
0.03  
0.02  
0.01  
t
READ TIME AT t  
2
1
T
- T = P  
C
θ (t)  
J(pk)  
(pk) JC  
SINGLE PULSE  
DUTY CYCLE, D = t /t  
1 2  
0.01  
0.01 0.02 0.03 0.05  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
t, TIME (ms)  
10  
20 30  
50  
100  
200 300 500 1000  
Figure 4. Thermal Response  
100  
There are two limitations on the power handling ability of  
a transistor: average junction temperature and second  
50  
200 μs  
1.0 ms  
5.0 ms  
20  
10  
breakdown. Safe operating area curves indicate I V  
C
CE  
limits of the transistor that must be observed for reliable  
operation; i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
dc  
5.0  
2.0  
1.0  
0.5  
T = 200°C  
J
The data of Figure 5 is based on T  
variable depending on conditions. Second breakdown pulse  
= 200_C; T is  
BONDING WIRE LIMITED  
THERMALLY LIMITED @  
J(pk)  
C
T = 25°C (SINGLE PULSE)  
SECOND BREAKDOWN  
LIMITED CURVES APPLY  
C
0.2  
0.1  
limits are valid for duty cycles to 10% provided T  
J(pk)  
v 200_C. T  
may be calculated from the data in  
J(pk)  
2N6338  
2N6341  
0.05  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
BELOW RATED V  
CEO  
0.02  
0.01  
2.0 3.0 5.0 7.0 10  
20 30  
50 70  
100 200  
V
CE  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 5. Active Region Safe Operating Area  
http://onsemi.com  
3
 

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