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2N6339 PDF预览

2N6339

更新时间: 2024-12-01 06:18:15
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 115K
描述
Silicon NPN Power Transistors

2N6339 数据手册

 浏览型号2N6339的Datasheet PDF文件第2页浏览型号2N6339的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341  
DESCRIPTION  
·With TO-3 package  
·Fast switching times  
·Low collector saturation voltage  
·Complement to type 2N6436~38  
APPLICATIONS  
·For use in industrial-military power amplifier  
and switching circuit applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
F
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
120  
140  
160  
180  
100  
120  
140  
150  
6
UNIT  
2N6338  
2N6339  
2N6340  
2N6341  
2N6338  
2N6339  
2N6340  
2N6341  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
VCEO  
Collector-emitter voltage  
V
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
25  
ICM  
IBC  
PD  
Tj  
Collector current-peak  
Base current  
50  
10  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
200  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
0.875  
/W  

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