Datasheet > 2N6059

2N6059

更新时间： 2024-11-11 22:45:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管放大器局域网
页数	文件大小	规格书
8页	131K
描述
Darlington Complementary Silicon Power Transistors

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数据手册
替代型号

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2N6059 数据手册

ON Semiconductort

PNP

Darlington Complementary

Silicon Power Transistors

2N6052

NPN

. . . designed for general–purpose amplifier and low frequency

switching applications.

2N6058

• High DC Current Gain —

= 3500 (Typ) @ I = 5.0 Adc

2N6059

*ON Semiconductor Preferred Device

• Collector–Emitter Sustaining Voltage — @ 100 mA

= 80 Vdc (Min) — 2N6058

CEO(sus)

100 Vdc (Min) — 2N6052, 2N6059

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

DARLINGTON

12 AMPERE

MAXIMUM RATINGS (1)

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

150 WATTS

2N6052

2N6059

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base voltage

Symbol

2N6058

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.2

Adc

Total Device Dissipation

150

Watts

@T = 25_C

Derate above 25_C

0.857

W/_C

CASE 1–07

TO–204AA

(TO–3)

Operating and Storage Junction

Temperature Range

T , T

–65 to +200_C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Rating

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

1.17

_C/W

160

140

120

100

125

150

175

200

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 2

2N6052/D

12 3 4 5 6 7 8

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2N6059 替代型号

型号	品牌	替代类型	描述	数据表
2N6338G	ONSEMI	功能相似	High-Power NPN Silicon Transistors

与2N6059相关器件

型号	品牌	获取价格	描述	数据表
2N6059_03	STMICROELECTRONICS	获取价格	SILICON NPN POWER DARLINGTON TRANSISTOR
2N6059_10	SEME-LAB	获取价格	SILICON MULTI-EPITAXIAL NPN TRANSISTOR
2N6059LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6060	MICROSEMI	获取价格	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal,
2N6060E3	MICROSEMI	获取价格	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal,
2N6061	MICROSEMI	获取价格	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal,
2N6061E3	MICROSEMI	获取价格	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal,
2N6062	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 60A I(C) \| TO-210AE
2N6063	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 60A I(C) \| TO-210AE
2N6063E3	MICROSEMI	获取价格	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal,