Datasheet > 2N6059_03

2N6059_03

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	45K
描述
SILICON NPN POWER DARLINGTON TRANSISTOR

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数据手册

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2N6059_03 数据手册

2N6059

SILICON NPN POWER DARLINGTON TRANSISTOR

■

STMicrolectronics PREFERRED

SALESTYPE

■

HIGH GAIN

NPN DARLINGTON

HIGH CURRENT

HIGH DISSIPATION

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

■

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

TO-3

DESCRIPTION

The 2N6059 is a silicon Epitaxial-Base NPN

transistor in monolithic Darlington configuration

mounted in Jedec TO-3 metal case.

It is inteded for use in power linear and low

frequency switching applications.

INTERNAL SCHEMATIC DIAGRAM

R₁Typ. = 6 KΩ

R₂Typ. = 55 Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEX

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (V_BE= -1.5V)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

100

I_CM

Collector Peak Current (t_p< 5 ms)

I_B

Base Current

0.2

150

P_tot

^oC

Total Dissipation at T_c≤ 25 C

T_stg

T_j

Storage Temperature

-65 to 200

200

Max. Operating Junction Temperature

1/4

February 2003

12 3 4

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与2N6059_03相关器件

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2N6059_10	SEME-LAB	SILICON MULTI-EPITAXIAL NPN TRANSISTOR	获取价格
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2N6061E3	MICROSEMI	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal,	获取价格