Datasheet > 2N6317C

2N6317C

更新时间： 2024-09-17 21:01:31

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	425K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2N6317C 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
最大集电极电流 (IC)：	7 A	配置：	Single
最小直流电流增益 (hFE)：	20	最高工作温度：	200 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	90 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	4 MHz	Base Number Matches：	1

2N6317C 数据手册

2N6315 2N6316 NPN

2N6317 2N6318 PNP

www.centralsemi.com

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6315 SERIES

types are complementary Silicon Power Transistors,

mounted in a hermetically sealed metal case,

designed for general purpose amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-66 CASE

2N6315

2N6317

2N6316

2N6318

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

7.0

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

2.0

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +200

1.95

°C

°C/W

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=Rated V

0.25

CBO

CEV

CEO

EBO

CBO

, V =1.5V

0.25

2.0

CEO BE

, V =1.5V, T =150°C

CEO BE

=1/2 Rated V

0.50

1.0

CEO

=5.0V

I =100mA, (2N6315, 2N6317)

CEO

I =100mA, (2N6316, 2N6318)

I =4.0A, I =0.4A

1.0

2.0

2.5

1.5

CE(SAT)

BE(SAT)

BE(ON)

I =7.0A, I =1.75A

=4.0V, I =2.5A

=4.0V, I =0.5A

=4.0V, I =2.5A

100

=4.0V, I =7.0A

4.0

=4.0V, I =500mA, f=1.0kHz

=10V, I =250mA, f=1.0MHz

4.0

MHz

R2 (6-April 2011)

中文翻译

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