Datasheet > 2N6318

2N6318

更新时间： 2024-11-09 05:55:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	116K
描述
Silicon PNP Power Transistors

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中文翻译

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2N6318 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6317 2N6318

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

·Complement to type 2N6315/6316

APPLICATIONS

·Designed for general-purpose power

amplifier and switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

2N6317

2N6318

2N6317

2N6318

V_CBO

Collector-base voltage

Open emitter

-80

-60

V_CEO

Collector-emitter voltage

Open base

-80

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

ꢀ

-7

Collector current-peak

Base current

-15

-2

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.94

ꢀ/W

12 3

中文翻译

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与2N6318相关器件

型号	品牌	获取价格	描述	数据表
2N6318A	NJSEMI	获取价格	Trans GP BJT PNP 80V 7A 3-Pin(2+Tab) TO-66
2N6318LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2
2N6322	SSDI	获取价格	30 AMP NPN HIGH VOLTAGE / HIGH ENERGY 200 VOLTS
2N6322	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6322	ISC	获取价格	Silicon NPN Power Transistors
2N6322	APITECH	获取价格	Power Bipolar Transistor, 30A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6322E3	MICROSEMI	获取价格	Power Bipolar Transistor, 30A I(C), 200V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
2N6323	MICROSEMI	获取价格	Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
2N6323	APITECH	获取价格	Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6324	SSDI	获取价格	30 AMP NPN HIGH VOLTAGE / HIGH ENERGY 200 VOLTS