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2N6327 PDF预览

2N6327

更新时间: 2024-02-18 07:24:00
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 118K
描述
Silicon NPN Power Transistors

2N6327 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.83
最大集电极电流 (IC):30 A配置:Single
最小直流电流增益 (hFE):6最高工作温度:200 °C
极性/信道类型:NPN最大功率耗散 (Abs):114 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):3 MHz

2N6327 数据手册

 浏览型号2N6327的Datasheet PDF文件第2页浏览型号2N6327的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6326 2N6327 2N6328  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·High DC current gain  
APPLICATIONS  
·Designed for audio amplifier and  
switching circuits applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
60  
UNIT  
2N6326  
2N6327  
2N6328  
2N6326  
2N6327  
2N6328  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
80  
100  
60  
VCEO  
Collector-emitter voltage  
V
80  
100  
5
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
30  
IB  
Base current  
7.5  
A
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
200  
200  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
0.875  
/W  

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