生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.71 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 20 A |
集电极-发射极最大电压: | 300 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-63 |
JESD-30 代码: | O-MUPM-D3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
极性/信道类型: | NPN | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3849 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | TO-210AE | |
2N3849E3 | MICROSEMI |
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Power Bipolar Transistor, 20A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, | |
2N385 | ETC |
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TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5 | |
2N3850 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA | |
2N3850E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 | |
2N3851 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA | |
2N3851E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 | |
2N3852 | ETC |
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-210AA | |
2N3852E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 | |
2N3853 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-210AA |