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2N3847E3 PDF预览

2N3847E3

更新时间: 2024-02-10 16:31:58
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
2页 42K
描述
Power Bipolar Transistor, 20A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,

2N3847E3 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-63
JESD-30 代码:O-MUPM-D3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

2N3847E3 数据手册

 浏览型号2N3847E3的Datasheet PDF文件第1页 
2N3846, 2N3847 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
ON CHARACTERISTICS (3)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 1 Adc; VCE = 3.0 Vdc  
IC = 5 Adc; VCE = 3.0 Vdc  
IC = 10 Adc; VCE = 3.0 Vdc  
Base-Emitter Sustaining Voltage  
VCE = 3 Vdc; IC = 10 Adc  
Base-Emitter Saturated Voltage  
IB = 1.6 Adc; IC = 10 Adc  
Collector-Emitter Saturated Voltage  
IB = 1.6 Adc; IC = 10 Adc  
70  
40  
12  
hFE  
240  
60  
Vdc  
Vdc  
Vdc  
VBE  
1.20  
1.30  
0.75  
VBE(sat)  
VCE(sat)  
DYNAMIC CHARACTERISTICS  
Magnitude of Common-Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
½hfe½  
IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz  
Small-Signal Short-Circuit Forward Current Transfer Ratio  
IC = 5 Adc, VCE = 10 Vdc, f = 1 kHz  
Output Capacitance  
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz  
10  
50  
35  
hfe  
250  
750  
pF  
Cobo  
SWITCHING CHARACTERISTICS  
Turn-On Time  
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;  
IB1 = 2 Adc; IB2 = -2 Adc; RL = 15W  
Turn-Off Time  
ton  
ms  
ms  
4
7
toff  
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;  
IB1 = 2 Adc; IB2 = 2 Adc; RL = 15W  
SAFE OPERATING AREA  
DC Tests  
TC = +1000C; VCE = 0 Vdc, IC = 0 Adc (See Figure 3 on Mil-PRF-19500/412)  
Test 1  
VCE = 7.5 Vdc; IC = 20 Adc; tp = 1.0 s; 1 cycle  
Test 2  
VCE = 200 Vdc; IC = 100 mAdc; tp = 1.0 s, 1 cycle  
Test 3  
VCE = 58 Vdc; IC = 1.0 Adc; tp = 1.0 s, 1 cycle  
Burnout by Pulsing (2N3847 only)  
TC = +1000C; VCE = 300 Vdc; IC = 20 mAdc; tp = 1.0 s, 1 cycle  
Unclamped Inductive Sweep  
TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 4 on Mil-PRF-19500/412)  
Clamped Inductive Sweep  
TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 5 on Mil-PRF-19500/412)  
3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  

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