是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | 风险等级: | 5.65 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
配置: | Single | 最小直流电流增益 (hFE): | 60 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.62 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 130 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3856 | NJSEMI |
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SILICON TRANSISTORS | |
2N3856 | MICRO-ELECTRONICS |
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Small Signal Bipolar Transistor, 0.1A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N3856A | NJSEMI |
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SILICON TRANSISTORS | |
2N3856A | CENTRAL |
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Transistor | |
2N3856A | MICRO-ELECTRONICS |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N3858 | GE |
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SILICON TRANSISTORS | |
2N3858 | NJSEMI |
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Trans GP BJT NPN 80V 5A 3-Pin TO-59 | |
2N3858-60 | GE |
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SILICON TRANSISTORS | |
2N3858A | GE |
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SILICON TRANSISTORS | |
2N3858A | CDIL |
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Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-9 |