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2N3859A/D26Z PDF预览

2N3859A/D26Z

更新时间: 2024-11-24 21:18:55
品牌 Logo 应用领域
德州仪器 - TI 放大器晶体管
页数 文件大小 规格书
2页 50K
描述
100mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N3859A/D26Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.65最大集电极电流 (IC):0.1 A
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):90 MHzBase Number Matches:1

2N3859A/D26Z 数据手册

 浏览型号2N3859A/D26Z的Datasheet PDF文件第2页 

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2N3859A/D28Z TI

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100mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3859A/D29Z TI

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2N3859A_02 FAIRCHILD

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NPN General Purpose Amplifier
2N3859A-18F CENTRAL

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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N3859A-18FLEADFREE CENTRAL

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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N3859A-5T CENTRAL

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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T, 3
2N3859A-5T1 CENTRAL

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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1,
2N3859AAPM CENTRAL

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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N3859AAPMLEADFREE CENTRAL

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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N3859AAPPLEADFREE CENTRAL

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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,